 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDD8444 N-Channel PowerTrench(R) MOSFET December 2005 FDD8444 N-Channel PowerTrench(R) MOSFET 40V, 50A, 5.2m Features RDS(ON) = 4m (Typ), VGS = 10V, ID=50A Qg(10) = 89nC (Typ), VGS=10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant A REE I DF Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Transmission Distributed Power Architecture and VRMs Primary Switch for 12V Systems M ENTATIO LE N MP LE D G S (c)2005 Fairchild Semiconductor Corporation FDD8444 Rev A (W) 1 www.fairchildsemi.com FDD8444 N-Channel PowerTrench(R) MOSFET Absolute Maximum Ratings Tc = 25C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS=10v) (Note1) Continuous (VGS=10v,with RJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power Dissipation Derate above 25oC Operating and Storage Temperature Ratings 40 20 155 17.5 Figure 4 535 227 1.52 -55 to +175 mJ W W/oC o Units V V A A C Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 0.66 52 oC/W oC/W Package Marking and Ordering Information Device Marking FDD8444 Device FDD8444 Package TO-252AA Reel Size 13" Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 32V VGS = 0V VGS = 20V TJ=150C 40 1 250 100 nA V A On Characteristics VGS(th) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VDS = VGS, ID = 250A ID = 50A, VGS = 10V ID = 50A, VGS = 10V, TJ = 175C 2 2.5 4 7.2 4 5.2 9.4 m V Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 10V VGS = 0 to 5V VGS = 0 to 2V VDD = 20V ID = 50A Ig = 1.0mA 6195 585 332 1.9 89 43 11 23 11 20 8240 780 500 116 56 14.5 pF pF pF nC nC nC nC nC nC 2 FDD8444 Rev A (W) www.fairchildsemi.com FDD8444 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 20V, ID = 50A VGS = 10V, RGS = 2 12 78 48 15 135 95 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD=50A ISD=25A IF= 50A, dIF/dt=100A/s IF= 50A, dIF/dt=100A/s 1.25 1.0 51 59 V V ns nC Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L=0.67mH, IAS=40A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 3 FDD8444 Rev A (W) www.fairchildsemi.com FDD8444 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1.2 POWER DISSIPATION MULIPLIER 180 160 ID, DRAIN CURRENT (A) VGS=10V 1.0 0.8 0.6 0.4 0.2 0.0 140 120 100 80 60 40 20 CURRENT LIMITED BY PACKAGE 0 25 50 75 100 125 o 150 175 0 25 50 75 100 125 o 150 175 TC , CASE TEMPERATURE( C) TC , CASE TEMPERATURE( C) Figure 1. Normalized Power Dissipation vs Case Temperature 2 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER 1 Normalized Thermal Impedance, ZJC D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 0.01 10 -5 10 -4 10 -3 t, Rectangular Pulse Duration (s) 10 -2 10 -1 10 0 10 1 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 1000 IDM, PEAK CURRENT (A) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 VGS = 10V 100 SINGLE PULSE 10 10 -5 10 -4 10 -3 t, Rectangular Pulse Duration (s) 10 -2 10 -1 10 0 10 1 Figure 4. Peak Current Capability 4 FDD8444 Rev A (W) www.fairchildsemi.com FDD8444 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1000 10us 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100us Starting TJ=25 C O 10 CURRENT LIMITED BY PACKAGE 10 1ms 10ms DC 1 Starting TJ=150 C If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] O 0.1 1 OPERATION IN THIS SINGLE PULSE AREA MAY BE LIMITED BY RDS(ON) TJ = MAX RATED TC = 25oC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 100 PULSE DURATION=80s DUTY CYCLE=0.5% MAX ID, DRAIN CURRENT (A) 100 VGS=10V 5.0V PULSE DURATION =80S DUTY CYCLE =0.5% MAX 80 ID,DRAIN CURRENT(A) VDD = 5V TJ = 175 C O 80 60 TJ = 25 C O 60 4.5V TJ=25 C 4.0V O 40 40 20 20 TJ = - 55 C 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.0 0.3 0.6 0.9 1.2 1.5 O VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics 12 11 RDS(ON), DRAIN TO SOURCE 10 ON-RESISTANCE (m) 9 8 7 6 5 4 4 TJ = 25 C 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 O Figure 8. Saturation Characteristics 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID=20A PULSE DURATION=80s DUTY CYCLE=0.5% MAX 1.6 1.4 1.2 1.0 0.8 0.6 -80 PULSE DURATION =80S DUTY CYCLE =0.5% MAX TJ = 175 C O ID = 50A VGS = 10V -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE( C) 200 Figure 9. Drain to Source On-Resistance vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 FDD8444 Rev A (W) www.fairchildsemi.com FDD8444 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1.2 1.1 NORMALIZED GATE THRESHOLD VOLTAGE 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS=VDS ID =250A ID =250A 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE( C) 200 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE ( C) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 CISS CAPACITANCE (pF) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 VGS,GATE TO SOURCE VOLTAGE(V) 9 8 7 6 5 4 3 2 1 0 0 20 40 60 Qg,GATE CHARGE (nC) 80 100 VDD=20V VDD=25V ID=50A VDD=15V f = 1MHz VGS = 0V COSS 1000 CRSS 100 0.1 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage 6 FDD8444 Rev A (W) www.fairchildsemi.com FDD8444 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I17 7 FDD8444 Rev A (W) www.fairchildsemi.com |
Price & Availability of FDD8444
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |